Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3

A Persano, B Nabet, M Currie… - … on Electron Devices, 2010 - ieeexplore.ieee.org
The potential of InAs quantum-dot (QD) photodetectors for room-temperature high-speed
operation at wavelengths near 1.3 μm is evaluated. Specifically, planar metal-semiconductor …
被引用次数：2 相关文章

[引用][C] Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu {m}

A Persano, B Nabet, M Currie… - … on Electron Devices, 2010 - ui.adsabs.harvard.edu
Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu{m}
- NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Single-Layer …
[PDF] academia.edu

[PDF][PDF] Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 µm

A Persano, B Nabet, M Currie, A Convertino… - IEEE TRANSACTIONS …, 2010 - academia.edu
The potential of InAs quantum-dot (QD) photode-tectors for room-temperature high-speed
operation at wavelengths near 1.3 µm is evaluated. Specifically, planar metal …

Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3

A Persano, B Nabet, M Currie, A Convertino… - IEEE Transactions on …, 2010 - infona.pl
The potential of InAs quantum-dot (QD) photodetectors for room-temperature high-speed
operation at wavelengths near 1.3 μm is evaluated. Specifically, planar metal-semiconductor …
[PDF] researchgate.net

[PDF][PDF] Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 µm

A Persano, B Nabet, M Currie… - IEEE …, 2010 - researchgate.net
The potential of InAs quantum-dot (QD) photode-tectors for room-temperature high-speed
operation at wavelengths near 1.3 µm is evaluated. Specifically, planar metal …

[引用][C] Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 μm

A PERSANO, B NABET… - IEEE …, 2010 - Institute of Electrical and Electronics …