Spin phenomena in asymmetrical [0 0 1] GaAs/Alx Ga1− x As quantum wells

P Tronc - Semiconductor Science and Technology, 2012 - iopscience.iop.org
Abstract Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in
asymmetrical [0 0 1] GaAs/Al x Ga 1− x As quantum wells by means of Hanle effect, ie with a …
被引用次数：1 相关文章

Spin phenomena in asymmetrical [0 0 1] GaAs/Alx Ga1-x As quantum wells

P Tronc - Semiconductor Science Technology, 2012 - ui.adsabs.harvard.edu
Abstract Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in
asymmetrical [0 0 1] GaAs/Al x Ga 1-x As quantum wells by means of Hanle effect, ie with a …

Spin phenomena in asymmetrical [0 0 1] GaAs/Alx Ga1−x As quantum wells

P Tronc - Semiconductor Science and Technology, 2012 - inis.iaea.org
[en] Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in
asymmetrical [0 0 1] GaAs/Al x Ga 1− x As quantum wells by means of Hanle effect, ie with a …

Spin phenomena in asymmetrical [0 0 1] GaAs/Al {sub x} Ga {sub 1-x} As quantum wells

P Tronc - Semiconductor Science and Technology, 2012 - osti.gov
Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in
asymmetrical [0 0 1] GaAs/Al {sub x} Ga {sub 1-x} As quantum wells by means of Hanle …
[PDF] researchgate.net

[PDF][PDF] Spin phenomena in asymmetrical [0 0 1] GaAs/Alx Ga1− x As quantum wells

P Tronc - Semicond. Sci. Technol, 2012 - researchgate.net
Abstract Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in
asymmetrical [0 0 1] GaAs/Alx Ga1− x As quantum wells by means of Hanle effect, ie with a …

[引用][C] Spin phenomena in asymmetrical [0 01] GaAs

P TRONC - Semiconductor science and technology, 2012 - Institute of Physics