Nanoscale engineering of radiation tolerant silicon carbide

Y Zhang, M Ishimaru, T Varga, T Oda… - Physical Chemistry …, 2012 - pubs.rsc.org
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …
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Nanoscale Engineering of Radiation Tolerant Silicon Carbide

Y Zhang, DM Ishimaru, T Varga, T Oda… - Physical Chemistry …, 2012 - osti.gov
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …

[引用][C] Nanoscale engineering of radiation tolerant silicon carbide

Y ZHANG, M ISHIMARU, T VARGA… - PCCP. Physical …, 2012 - pascal-francis.inist.fr
Nanoscale engineering of radiation tolerant silicon carbide CNRS Inist Pascal-Francis CNRS
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Nanoscale engineering of radiation tolerant silicon carbide.

Y Zhang, M Ishimaru, T Varga, T Oda… - Physical Chemistry …, 2012 - europepmc.org
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …

Nanoscale engineering of radiation tolerant silicon carbide

Y Zhang, M Ishimaru, T Varga, T Oda… - Physical chemistry …, 2012 - pubmed.ncbi.nlm.nih.gov
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …

[引用][C] Nanoscale engineering of radiation tolerant silicon carbide

Y Zhang, M Ishimaru, T Varga, T Oda… - Physical Chemistry …, 2012 - ui.adsabs.harvard.edu
Nanoscale engineering of radiation tolerant silicon carbide - NASA/ADS Now on home page
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[引用][C] Nanoscale engineering of radiation tolerant silicon carbide

Y Zhang, M Ishimaru, T Varga, T Oda… - Physical Chemistry …, 2012 - cir.nii.ac.jp

Nanoscale engineering of radiation tolerant silicon carbide

Y Zhang, M Ishimaru, T Varga, T Oda… - Physical Chemistry …, 2012 - inl.elsevierpure.com
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …

Nanoscale Engineering Of Radiation Tolerant Silicon Carbide

Y Zhang, M Ishimaru, T Varga, T Oda, CM Hardiman… - 2012 - osti.gov
Radiation tolerance is determined by how effectively the microstructure can remove point
defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of …

[引用][C] Nanoscale engineering of radiation tolerant silicon carbide

Y ZHANG, M ISHIMARU, T VARGA… - PCCP. Physical …, 2012 - Royal Society of Chemistry