Carrier distribution, gain, and lasing in 1.3-/spl mu/m InAs-InGaAs quantum-dot lasers

AA Dikshit, JM Pikal - IEEE journal of quantum electronics, 2004 - ieeexplore.ieee.org
In this paper, we present the results of a theoretical model built to describe the temperature-
dependent lasing characteristics of InAs-InGaAs quantum-dot (QD) lasers operating at …
被引用次数：40 相关文章

[引用][C] Carrier Distribution, Gain, and Lasing in 1.3-mu m InAs InGaAs Quantum-Dot Lasers

AA Dikshit, JM Pikal - IEEE Journal of Quantum Electronics, 2004 - ui.adsabs.harvard.edu
Carrier Distribution, Gain, and Lasing in 1.3- mu m InAs InGaAs Quantum-Dot Lasers -
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[引用][C] Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers

AA DIKSHIT, JM PIKAL - IEEE journal of quantum electronics, 2004 - pascal-francis.inist.fr
Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers CNRS Inist
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[引用][C] Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers

AA DIKSHIT, JM PIKAL - IEEE journal …, 2004 - Institute of Electrical and Electronics …