[HTML][HTML] GaAs 薄膜发光改性研究进展
肖卫， 贾慧民， 唐吉龙， 房丹， 方铉， 王新伟… - Material …, 2018 - hanspub.org
… GaAs film were expounded. This study is significant for the further application of GaAs film in
optoelectronic … 研究发现掺杂元素Si在GaAs中起两性(施主或受主)杂质作用,同时适当提高V/III束…
optoelectronic … 研究发现掺杂元素Si在GaAs中起两性(施主或受主)杂质作用,同时适当提高V/III束…
[HTML][HTML] N 型與P 型通道銻化物異質介面場效電晶體磊晶成長與元件特性分析
HC Ho - 2012 - ir.lib.ncu.edu.tw
… GaAs substrate and accommodated a large number of defects from the lattice mismatch
interface. Two quantum well structures … epitaxy on the same GaAs wafer and first demonstrated …
interface. Two quantum well structures … epitaxy on the same GaAs wafer and first demonstrated …