[PDF][PDF] Cascode GaN 高电子迁移率晶体管高频驱动电路及损耗分析

岳改丽, 向付伟, 李忠 - 电工技术学报, 2021 - dgjsxb.ces-transaction.com
… of the resonant gate driver in the silicon MOSFET and the … -circuit detection and protection
of silicon carbide MOSFET[J]… and loss of dual Buck grid-connected inverter based on GaN …

[PDF][PDF] 基于变电阻驱动的SiC 器件开关轨迹协同调控

邹铭锐, 曾正, 孙鹏, 王亮, 王宇雷 - 电工技术学报, 2023 - dgjsxb.ces-transaction.com
… model of silicon carbide power MOSFET including third-… On the use of magnetically coupled
resonant snubbers to … MOSFETs using a stage-wise gate driver[J]. CPSS Transactions on …

[PDF][PDF] 基于GaN 器件的高功率密度LLC 谐振变换器的研究

魏小富, 陈神炀, 朱宏铿, 杨旭, 郭翔 - 电工电能新技术, 2019 - ateee.iee.ac.cn
… and high power density LLC resonant converter based on … conductivity characteristics of
silicon carbide MOSFET). [J]. … power supplies with high efficiency, low loss and high power

[PDF][PDF] 基于单向脉冲电路和SiC 器件的超高频感应加热电源

石新春, 马莽原, 柴艳鹏, 李亚斌, 付超 - 电工技术学报, 2021 - dgjsxb.ces-transaction.com
… parallel resonant load and unidirectional pulse circuit are … An improved SiC MOSFET gate
driver design for crosstalk … short-circuit detection and protection of silicon carbide MOSFETs[J]. …

[PDF][PDF] 一种碳化硅与硅器件混合型三电平有源中点钳位零电压转换软开关变流器

李锦, 党恩帅, 范雨顺, 董航飞, 刘进军 - 电工技术学报, 2024 - dgjsxb.ces-transaction.com
… of switching oscillations for silicon carbide MOSFETs in three-… A resonant auxiliary drive
circuit for SiC MOSFET to … have the advantages of low losses and high junction temperature, …