偏角度基板對穿隧層之效應與成長砷化鎵於鍺/矽基板上對低成本高效率多接面三五族太陽電池之應用
游宏偉 - 2012 - ir.lib.nycu.edu.tw
… reduce oxygen-incorporation in N ++ -GaAs layer, and also … as group III source, whereas
pure arsine (AsH3) with low H2O … Oxygen is known as deep acceptor and non-radiative trap, …
pure arsine (AsH3) with low H2O … Oxygen is known as deep acceptor and non-radiative trap, …
利用有機金屬化學氣相沉積法研究砷化鎵於矽基板上成核成長之技術
潘文清和 - 2013 - ir.lib.nycu.edu.tw
… Ga-Ga bonds have electron deficiency and acts as acceptors, … For group-V sources we use
arsine AsH3 and phosphine PH3. … The carbon incorporation may distort the GaAs lattice and …
arsine AsH3 and phosphine PH3. … The carbon incorporation may distort the GaAs lattice and …