… :预先填埋底部介质隔 离(Bottom Dielectric Isolation, BDI),如图4 (b… on characteristics of stacked
gate-all-around nanosheet FET[J]. … Stacked nanosheet gate-all-around transistor to enable …

… proposed to stack two layers of nanosheet channels between … investigate the performance
of our 2D nanosheet transistors. … top and bottom layers are the same dielectric layer material. …

… for the bottom-up synthesis of 2D MOF nanosheets 288,289. … ) plane, thus enabling the
formation of 2D CuBDC nanosheets. … their stacked rhombic topology together with π–π stacking, …

… It is believed that the π–π stacking interaction between πrich … in electronics, fieldeffect
transistor and gas senor 107–110. In … (2.0 eV) and high dielectric constant, cubic BP attracts much …

… A bottom electrode structure field-effect transistor (FET) based … (d) Schematic diagram of the
stacking structure of the o-BP … 10−12 F m−1 for the permittivity of vacuum, d = oxide thickness …

… Stacked GO sheets can be readily loosened up and even re-… scaffold and support in the 2D
nanosheet matrix, we further … the development of fundamental transistors, different kinds of …

… separate individual sheets from stacked 2D layered crystals by … to produce mainly carbon
nanosheets and carbon nanowalls, … on the production of isolated freestanding graphene sheets …

… as heat sinks on the switching transistors. 4. Control wires … are many layers of graphene
stacked. For the best example … The compression pistons can be made of a dielectric material, …