以氫化物氣相磊晶法開發III-V 族氮化物基板(II)
李威儀 - 2008 - ir.lib.nycu.edu.tw
… 打GaN/Al2O3 介面,由於Sapphire 對此雷射波 段長並不吸收,使得雷射光會穿透Sapphire 而到達
GaN/Sapphire 界面,此時界面表層的 GaN … N2 逸散,因此,GaN 就會和原生基板Sapphire 分離. …
GaN/Sapphire 界面,此時界面表層的 GaN … N2 逸散,因此,GaN 就會和原生基板Sapphire 分離. …
缺陷對氮化物藍光二極體光電特性之影響
許晉源， 吳耀銓， 藍文厚 - 2005 - ir.lib.nycu.edu.tw
… light due to its high luminescence efficiency, quick response time… undoped GaN layer grown
at 1040 C, a 3 µm Si-(n) doped … contact to GaN, different metals were applied in both n- and p…
at 1040 C, a 3 µm Si-(n) doped … contact to GaN, different metals were applied in both n- and p…
高效率近紫外光發光二極體元件製作
凃博閔， 冉曉雯， 張俊彥 - 2012 - ir.lib.nycu.edu.tw
… high temperature in the GaN/sapphire interface. And even … 1.2.1, they noticed that the intensity
of luminescence kept … on 2-inch c-plane (0001) sapphire substrates using an atmospheric-…
of luminescence kept … on 2-inch c-plane (0001) sapphire substrates using an atmospheric-…
二六族化合物半導體及奈米結構的光學性質
林彥丞， 周武清 - 2008 - ir.lib.nycu.edu.tw
… The inset displays the PL spectra of undoped ZnSe and the n… the magnetic properties of
p-doped Zn1-xMnxTe under high … They all found an enhancement in luminescence and lifetime …
p-doped Zn1-xMnxTe under high … They all found an enhancement in luminescence and lifetime …