利用有機金屬化學氣相沉積法研究砷化鎵於矽基板上成核成長之技術
潘文清和 - 2013 - ir.lib.nycu.edu.tw
… of GaAs on Si using Metal-Organic Chemical Vapor Deposition … A high quality thin GaAs
layers on Si substrate served as an … group V precursors such as tertiarybutylarsine (TBAs) and …
layers on Si substrate served as an … group V precursors such as tertiarybutylarsine (TBAs) and …
三五族半導體發光元件結構優化之研究
張詒安， 王興宗 - 2007 - ir.lib.nycu.edu.tw
… 相沉積法(metalorganic chemical vapor deposition, MOCVD)… of high electroluminescence
radiation from GaAs pn junction … The experiments facilitate the growth of high quality films that …
radiation from GaAs pn junction … The experiments facilitate the growth of high quality films that …
週期性分散式砷化鋁鎵銦多量子井的光學特性: 自發輻射, 受激輻射及飽和吸收特性
陳毅帆， 陳永富 - 2013 - ir.lib.nycu.edu.tw
… latticed-matched substrate via the metal-organic chemical-vapor-deposition or … 4As multiple
quantum well structures grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. …
quantum well structures grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. …