Undulation of sub-100nm porous dielectric structures: A mechanical analysis
In microelectronics technologies, patterning of sub-100 nm width ridges capped with a
titanium nitride mask can lead to undulations of the ridges detrimental to performances. This
phenomenon is observed with highly compressive residual stress into the mask (> 2 GPa),
with dielectrics with low elastic properties (E< 2 Gpa) and with high dielectric ridge heights
(> 230 nm). Experiments and simulations show that undulations can originate from
buckling which allows the release of the strain energy initially stored in the mask …
titanium nitride mask can lead to undulations of the ridges detrimental to performances. This
phenomenon is observed with highly compressive residual stress into the mask (> 2 GPa),
with dielectrics with low elastic properties (E< 2 Gpa) and with high dielectric ridge heights
(> 230 nm). Experiments and simulations show that undulations can originate from
buckling which allows the release of the strain energy initially stored in the mask …
以上显示的是最相近的搜索结果。 查看全部搜索结果