Catastrophe Optical Damage (COD) usually occurs at the front cavity surface of quantum
well semiconductor laser diodes, and it is a great trouble to its output power and life. The …

Output power and reliability are the most important characteristic parameters of
semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs …

In order to fabricate 940 nm InGaAs/GaAsP/GaInP semiconductor lasers with non-absorbing
window (NAW), the induced quantum well intermixing (QWI) is investigated using impurity …

The effect of intermixing in change InGaAs/AlGaAs quantum well structure using impurity-
free vacancy disordering (IFVD) technique was investigated. Through the experiment we …

The optical catastrophic damage that usually occurs at the cavity surface of semiconductor
lasers has become the main bottleneck affecting the improvement of laser output power and …

Quantum-well intermixing (QWI) technology is commonly considered as an effective
methodology to tune the post-growth bandgap energy of semiconductor composites for …

The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well
structure using impurity free induced disordering (IFVD) technique. The degradation of the …

We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based
multiple quantum wells structures by secondary ion mass spectrometry and observe that the …

Intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum well structures after rapid thermal
annealing with and without an anodic oxide cap on the surface was studied by low …

Quantum well intermixing (QWI) by the impurity-free vacancy disordering (IFVD) technique is
an important and effective approach for the monolithic integration of optoelectronic devices …