50 nm technology. It exhibits 330.6 mW read operating power during 4 channel operation,
achieving 12.8 GB/s data bandwidth. Test correlation techniques to verify functions through
micro bumps and test pads have been developed. Block based dual period refresh scheme
is applied to reduce self refresh current with minimum chip size burden. Stacking of 2 dies
with 7.5 μm diameter and 40 μm pitch TSVs has been fabricated and tested, which results in …