[HTML][HTML] 阳离子迁移型阻变存储材料与器件研究进展
高双， 曾飞， 宋成， 潘峰 - 材料科学与工艺, 2016 - hit.alljournals.cn
… memory,cation-migration-based resistive random access … in cation-migration-based RRAM
in terms of materials,… Resistive switching induced by metallic filaments formation through Poly(…
in terms of materials,… Resistive switching induced by metallic filaments formation through Poly(…
[PDF][PDF] 基于溶液法制材料的阻变随机存储器的电学及其人工突触特性的研究
Z Shen - 2021 - core.ac.uk
… [5, 46-50] In this thesis, I will focus on the switching mechanisms comprising of non-metal-…
, "Forming and switching mechanisms of a cation-migration-based oxide resistive memory," …
, "Forming and switching mechanisms of a cation-migration-based oxide resistive memory," …