1μm Pitch direct hybrid bonding with< 300nm wafer-to-wafer overlay accuracy

A Jouve, V Balan, N Bresson… - 2017 IEEE SOI-3D …, 2017 - ieeexplore.ieee.org
… Therefore, considering the constant pitch reduction need of component roadmaps, the …
hybrid bonding process optimization achieved on 300mm wafers to enable down to 1µm pitch

Sub-10µm pitch hybrid direct bond interconnect development for die-to-die hybridization

JP Mudrick, JA Sierra-Suarez… - 2019 IEEE 69th …, 2019 - ieeexplore.ieee.org
Direct bond interconnect (DBI) processes enable chip to chip, low resistivity electrical
connections for 2.5-D scaling of electrical circuits and heterogenous integration. This work …

Die to wafer hybrid bonding and fine pitch considerations

T Workman, L Mirkarimi, J Theil… - 2021 IEEE 71st …, 2021 - ieeexplore.ieee.org
… ) hybrid bonding has been demonstrated at pad size and pitch as small as 1 μm pad on 2 μm
pitch [… bonder and allow direct comparison to results from our test vehicles with larger pad & …

Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability

L Arnaud, S Moreau, A Jouve, I Jani… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
… processed separately and bonded together with direct hybrid bonding at room temperature
[2]. … Right is SEM view of 1 µm pitch hybrid bonding pads integrated with single damascene. …

Towards interconnection pitch with Die-to-Wafer direct hybrid bonding

E Bourjot, C Castan, N Nadi, A Bond… - 2021 IEEE 71st …, 2021 - ieeexplore.ieee.org
Direct hybrid bonding offers several advantages compared to other 3D … Indeed, direct hybrid
bonding benefits are the capability to reach easily interconnection pitches between 1μm to …

Fine pitch die-to-wafer hybrid bonding

L Mirkarimi, T Workman, J Theil… - 2023 IEEE 73rd …, 2023 - ieeexplore.ieee.org
Direct Bond Interconnect (DBI®) is the hybrid bonding platform … bonding at a pitch of 1 μm
for their NAND products [6]. Nevertheless, D2W hybrid bonding lags behind W2W pitch scaling …

Scaling package interconnects below 20µm pitch with hybrid bonding

G Gao, L Mirkarimi, G Fountain, L Wang… - 2018 IEEE 68th …, 2018 - ieeexplore.ieee.org
… an interconnect pitch smaller than 40μm. Wafer-to-wafer (W2W) direct bond interconnect …
We measured CMP for the following bond pad sizes: 1 μm line width in a 20μm grid pattern, …

Evaluation of hybrid bonding technology of single-micron pitch with planar structure for 3D interconnection

M Ohyama, M Nimura, J Mizuno, S Shoji… - Microelectronics …, 2016 - Elsevier
… Third, a 1 μm-thick Cu and 3 μm-thick Sn were sequentially electroplated on the Ti/Cu layer
… because the Cu/Sn bumps can be directly contacted with the Ti/Cu/Au film during the hybrid

Study of ultra-fine 0.4 μm pitch wafer-to-wafer hybrid bonding and impact of bonding misalignment

Y Ikegami, T Onodera, M Chiyozono… - 2024 IEEE 74th …, 2024 - ieeexplore.ieee.org
… a pitch of less than 1 μm. Furthermore, accurate control is essential for achieving high precision
in bonding … 10 illustrates a direct relationship between the misalignment value and the …

0.5 μm Pitch Wafer-to-wafer Hybrid Bonding at Low Temperatures with SiCN Bond Layer

K Ma, N Bekiaris, CH Hsu, L Xue… - 2024 IEEE 74th …, 2024 - ieeexplore.ieee.org
Direct hybrid bonding technique is a key technology for … ) of W2W hybrid bonding Cu
interconnect pitch to around 1 μm. More … bonding pitch to further scale down to much less than 1