1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding
Optics Express, 2018•opg.optica.org
In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at
1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single
mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is
demonstrated. High temperature operation with continuous wave lasing up to 100° C is
obtained. Threshold current densities as low as 205 A/cm^ 2 were measured. These devices
are attractive candidates to use in uncooled silicon photonic transceivers in data centers.
1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single
mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is
demonstrated. High temperature operation with continuous wave lasing up to 100° C is
obtained. Threshold current densities as low as 205 A/cm^ 2 were measured. These devices
are attractive candidates to use in uncooled silicon photonic transceivers in data centers.
In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm^2 were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.
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