10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of
organizations in the US with prospective applications in high-voltage and high-frequency
power-electronic systems. The aim of this paper is to demonstrate the high-frequency and
high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost
converter. In this study, 10-kV SiC MOSFET and junction barrier Schottky (JBS) diode were
characterized and modeled in SPICE. Following this, a dc/dc boost converter based on a 10 …

W kV SiC MOSFETs are currently under development by a number of organizations in the
United States with the aim to enable their applications in high voltage high frequency power
conversion applications. The aim of this study is to demonstrate their high frequency high
temperature operation capability in the application of a DC/DC boost converter. A DC/DC
boost converter based on a 10 kV 10 A SiC MOSFET and a 10 kV 5A Junction Barrier
Schottky (JBS) diode is designed and tested for continuous conditions up to a switching …