compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents
of<; 100 μA at 325° C, turn-on and turn-off switching transients of<; 15 ns at 250° C, current
gain as high as 72, on-resistance as low as 235 mΩ, second-breakdown-free square
RBSOA, and short-circuit withstand time of 22 μs were measured on the SiC SJTs. For
switching 7 A and 800 V at 100 kHz, the SiC SJT+ GeneSiC SiC Schottky rectifier as Free …