1200 V SiC “Super” Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications

R Singh, S Sundaresan, E Lieser… - 2012 Twenty-Seventh …, 2012 - ieeexplore.ieee.org
R Singh, S Sundaresan, E Lieser, M Digangi
2012 Twenty-Seventh Annual IEEE Applied Power Electronics …, 2012ieeexplore.ieee.org
The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is
compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents
of<; 100 μA at 325° C, turn-on and turn-off switching transients of<; 15 ns at 250° C, current
gain as high as 72, on-resistance as low as 235 mΩ, second-breakdown-free square
RBSOA, and short-circuit withstand time of 22 μs were measured on the SiC SJTs. For
switching 7 A and 800 V at 100 kHz, the SiC SJT+ GeneSiC SiC Schottky rectifier as Free …
The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of <;100 μA at 325 °C, turn-on and turn-off switching transients of <;15 ns at 250 °C, current gain as high as 72, on-resistance as low as 235 mΩ, second-breakdown-free square RBSOA, and short-circuit withstand time of 22 μs were measured on the SiC SJTs. For switching 7 A and 800 V at 100 kHz, the SiC SJT + GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a power loss reduction of about 47 %, when compared to the best Si IGBT + SiC Schottky FWD.
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