2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm
We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for
the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing
operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with
responsivities of 16 and 5 mA/W at 1.3 and 1.55 μm, respectively, and dark currents of 1
mA/cm2, is entirely integrable on standard silicon electronics and is an appealing low-cost
candidate for fiber-to-the-home communication networks.© 2003 American Institute of …
the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing
operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with
responsivities of 16 and 5 mA/W at 1.3 and 1.55 μm, respectively, and dark currents of 1
mA/cm2, is entirely integrable on standard silicon electronics and is an appealing low-cost
candidate for fiber-to-the-home communication networks.© 2003 American Institute of …
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