[HTML][HTML] 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the
reflective layer are demonstrated. In addition to the description of the hole transport
mechanism that allows hole injection from p-type Si into the wide bandgap device, the
details of the LED structure which take advantage of the p-type Si layer as a reflective layer
to enhance light extraction efficiency (LEE) are elaborated. Fabricated LEDs were …
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the
reflective layer are demonstrated. In addition to the description of the hole transport
mechanism that allows hole injection from p-type Si into the wide bandgap device, the
details of the LED structure which take advantage of the p-type Si layer as a reflective layer
to enhance light extraction efficiency (LEE) are elaborated. Fabricated LEDs were …
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