The heterojunction bipolar transistor (HBT) differs from the classical homojunction bipolar junction transistor in that each emitter‐base‐collector layer is composed of a different semiconductor material. 2D material (2DM)‐based heterojunctions have attracted attention because of their wide range of fundamental physical and electrical properties. Moreover, strain‐free heterostructures formed by van der Waals interaction allows true bandgap engineering regardless of the lattice constant mismatch. These characteristics make it possible to fabricate high‐performance heterojunction devices such as HBTs, which have been difficult to implement in conventional epitaxy. Herein, NPN double HBTs (DHBTs) are constructed from vertically stacked 2DMs (n‐MoS₂/p‐WSe₂/n‐MoS₂) using dry transfer technique. The formation of the two P–N junctions, base‐emitter, and base‐collector junctions, in DHBTs, was experimentally observed. These NPN DHBTs composed of 2DMs showed excellent electrical characteristics with highly amplified current modulation. These results are expected to extend the application field of heterojunction electronic devices based on various 2DMs.