360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (LEDoS) micro-displays

ZJ Liu, WC Chong, KM Wong… - Journal of Display …, 2013 - ieeexplore.ieee.org
Journal of Display Technology, 2013ieeexplore.ieee.org
In this paper, we describe the design and fabrication of 360 PPI flip-chip mounted active
matrix (AM) addressable light emitting diode on silicon (LEDoS) micro-displays. The LEDoS
micro-displays are self-emitting devices which have higher light efficiency than liquid crystal
based displays (LCDs) and longer lifetime than organic light emitting diodes (OLEDs) based
displays. The LEDoS micro-displays were realized by integrating monolithic LED micro-
arrays and silicon-based integrated circuit using a flip-chip bonding technique. The active …
In this paper, we describe the design and fabrication of 360 PPI flip-chip mounted active matrix (AM) addressable light emitting diode on silicon (LEDoS) micro-displays. The LEDoS micro-displays are self-emitting devices which have higher light efficiency than liquid crystal based displays (LCDs) and longer lifetime than organic light emitting diodes (OLEDs) based displays . The LEDoS micro-displays were realized by integrating monolithic LED micro-arrays and silicon-based integrated circuit using a flip-chip bonding technique. The active matrix driving scheme was designed on the silicon to provide sufficient driving current and individual controllability of each LED pixel. Red, green, blue and Ultraviolet (UV) LEDoS micro-displays with a pixel size of 50 μm and pixel pitch of 70 μm were demonstrated. With a peripheral driving board, the LEDoS micro-display panels were programmed to show representative images and animations.
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