4.3 GHz optical bandwidth light emitting transistor
We demonstrate a quantum-well base heterojunction bipolar light emitting transistor
(HBLET) operating in the common collector configuration with a 3 dB optical response
bandwidth f 3 dB of 4.3 GHz. The HBLET has a current gain, β (=| Δ IC/Δ IB|) as high as 30,
and can be operated as a three-port device to provide simultaneously an optical and
electrical output with gain. The f 3 dB of 4.3 GHz corresponds to an effective carrier
recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be …
(HBLET) operating in the common collector configuration with a 3 dB optical response
bandwidth f 3 dB of 4.3 GHz. The HBLET has a current gain, β (=| Δ IC/Δ IB|) as high as 30,
and can be operated as a three-port device to provide simultaneously an optical and
electrical output with gain. The f 3 dB of 4.3 GHz corresponds to an effective carrier
recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be …
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