47–77 GHz and 70–155 GHz LNAs in SiGe BiCMOS technologies
G Liu, H Schumacher - 2012 IEEE Bipolar/BiCMOS Circuits and …, 2012 - ieeexplore.ieee.org
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012•ieeexplore.ieee.org
This paper presents two broadband LNAs covering the frequency ranges from 47 to 77 GHz
and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has
been adopted in both circuits to achieve the wide bandwidth. While the V-band LNA
achieves the design target, the bandwidth in W/F-band is reduced to 73-140 GHz, with a mid-
band gain of 20 dB. The measured NF is below 7.2 dB from 50 to 75 GHz for the V-band
LNA and below 7 dB from 78 to 110 GHz for the W/F-band LNA. The circuits are fabricated in …
and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has
been adopted in both circuits to achieve the wide bandwidth. While the V-band LNA
achieves the design target, the bandwidth in W/F-band is reduced to 73-140 GHz, with a mid-
band gain of 20 dB. The measured NF is below 7.2 dB from 50 to 75 GHz for the V-band
LNA and below 7 dB from 78 to 110 GHz for the W/F-band LNA. The circuits are fabricated in …
This paper presents two broadband LNAs covering the frequency ranges from 47 to 77 GHz and 73 to 140 GHz, with peak gain above 20 dB. A proposed T-type matching topology has been adopted in both circuits to achieve the wide bandwidth. While the V-band LNA achieves the design target, the bandwidth in W/F-band is reduced to 73-140 GHz, with a mid-band gain of 20 dB. The measured NF is below 7.2 dB from 50 to 75 GHz for the V-band LNA and below 7 dB from 78 to 110 GHz for the W/F-band LNA. The circuits are fabricated in 0.25 μm and 0.13 μm SiGe BiCMOS technologies, respectively. Both LNAs are differential circuits and consume 52/54 mW DC power. To the authors' knowledge, both LNAs achieve the widest bandwidth in the corresponding frequency band.
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