70 GSa/s and 51 GHz bandwidth track‐and‐hold amplifier in InP DHBT process
J Deza, A Ouslimani, A Konczykowska… - Electronics …, 2013 - Wiley Online Library
J Deza, A Ouslimani, A Konczykowska, A Kasbari, J Godin, G Pailler
Electronics Letters, 2013•Wiley Online LibraryA differential 70 GSa/s track‐and‐hold amplifier has been designed and fabricated in a 320
GHz‐fT InP double heterojunction bipolar transistor process. Measurements show a 51 GHz
small‐signal bandwidth with an S11 parameter lower than− 15 dB up to 56 GHz. The
transient operation is verified up to 70 GSa/s. 60 GSa/s spectral measurements give total
harmonic distortion<− 46 dB up to 7 GHz and<− 37 dB over the whole measurement range.
GHz‐fT InP double heterojunction bipolar transistor process. Measurements show a 51 GHz
small‐signal bandwidth with an S11 parameter lower than− 15 dB up to 56 GHz. The
transient operation is verified up to 70 GSa/s. 60 GSa/s spectral measurements give total
harmonic distortion<− 46 dB up to 7 GHz and<− 37 dB over the whole measurement range.
A differential 70 GSa/s track‐and‐hold amplifier has been designed and fabricated in a 320 GHz‐fT InP double heterojunction bipolar transistor process. Measurements show a 51 GHz small‐signal bandwidth with an S11 parameter lower than −15 dB up to 56 GHz. The transient operation is verified up to 70 GSa/s. 60 GSa/s spectral measurements give total harmonic distortion <−46 dB up to 7 GHz and <−37 dB over the whole measurement range.
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