A 200-GHz true E-mode low-noise MHEMT
H Maher, I El Makoudi, P Frijlink… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
… true E-MHEMT for which the normally off behavior was obtained while keeping excellent
high-frequency gain and low-noise … of the 110-nm E-MHEMTs results from good process control. …
high-frequency gain and low-noise … of the 110-nm E-MHEMTs results from good process control. …
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
… systems and also for low noise wide bandwidth amplifier for … which exhibits a cut-off frequency
of 200 GHz and the device … of a true E-mode 20-nm double δ-doped, T-gate MHEMTs on …
of 200 GHz and the device … of a true E-mode 20-nm double δ-doped, T-gate MHEMTs on …
20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications
… MHEMTs are attractive candidates for future terahertz applications such as high-resolution
radars for space research and also for low-noise … The main advantage of E-mode MHEMTs is …
radars for space research and also for low-noise … The main advantage of E-mode MHEMTs is …
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
… Moreover GaAs MHEMTs provide low noise, high gain, high efficiency, low DC … of E-Mode
MHEMTs are less compared to D-Mode MHEMT, the circuits designed using E-Mode MHEMT …
MHEMTs are less compared to D-Mode MHEMT, the circuits designed using E-Mode MHEMT …
[PDF][PDF] 22 nm In0: 75Ga0: 25As channel-based HEMTs on InP/GaAs substrates for future THz applications
… DC characteristics of enhancement mode (E-mode) Lg D 22 nm … essential components in
commercial low noise, greater band… A 200 GHz true e-mode low-noise MHEMT. IEEE Trans …
commercial low noise, greater band… A 200 GHz true e-mode low-noise MHEMT. IEEE Trans …
Metamorphic HEMTs for Sub Millimeter Wave Applications
… RF performance when compared with E-Mode MHEMTs [168–177]… transistor gain with low
noise figure in the case of MHEMTs. The … Zirath, Monolithically integrated 200-GHz double-slot …
noise figure in the case of MHEMTs. The … Zirath, Monolithically integrated 200-GHz double-slot …
22 nm InAs channel-based HEMTs on InP/GaAs substrates for future THz applications
… is superior to GaAs MHEMT in terms of ${f}_{{\rm{T}}}$ … of enhancement mode (E-mode)
${L}_{{\rm{g}}}=$ … become essential components in commercial low noise, greater bandwidth …
${L}_{{\rm{g}}}=$ … become essential components in commercial low noise, greater bandwidth …
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
… The real parts of Y 21 and Y 22 are plotted in Fig. 3 over a wide … for frequencies higher than
200 GHz is questionable because of … in the frequency range 10–200 GHz, in which the non-…
200 GHz is questionable because of … in the frequency range 10–200 GHz, in which the non-…
Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology
… correlation time constant on the actual NF around 100 GHz. As … This is absent in the
measurements where the real line … The cut-off frequency of the input lines in around 200 GHz …
measurements where the real line … The cut-off frequency of the input lines in around 200 GHz …
InP HBT technologies for THz integrated circuits
… ICs and power combined modules around 200 GHz. Finally, we … [88] InP HEMT and mHEMT
processes, respectively. Reported … The receiver IF output was fed to a 2-GHz low-noise IF …
processes, respectively. Reported … The receiver IF output was fed to a 2-GHz low-noise IF …