A 25 Gbps silicon microring modulator based on an interleaved junction
Optics express, 2012•opg.optica.org
A silicon microring modulator utilizing an interleaved pn junction phase shifter with a V_πL
of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is
demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB
excess optical insertion loss, conditions which correspond to a power consumption of 471
fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated
across more than 10 km of single-mode fiber with minimal signal degradation.
of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is
demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB
excess optical insertion loss, conditions which correspond to a power consumption of 471
fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated
across more than 10 km of single-mode fiber with minimal signal degradation.
A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a V_πL of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.
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