A 474 GHz HBV Frequency Quintupler Integrated on a 20 Thick Silicon Substrate
A Malko, T Bryllert, J Vukusic… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
IEEE Transactions on Terahertz Science and Technology, 2014•ieeexplore.ieee.org
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler
(× 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV
material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 μm)
of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of
output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to
conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.
(× 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV
material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 μm)
of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of
output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to
conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( ×5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 μm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.
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