A CMOS compatible aluminum scandium nitride-based ferroelectric tunnel junction memristor
X Liu, J Zheng, D Wang, P Musavigharavi… - arXiv preprint arXiv …, 2020 - arxiv.org
arXiv preprint arXiv:2012.10019, 2020•arxiv.org
… We demonstrate a memristor comprising a metal/insulator/ferroelectric/metal structure (Pt/native
oxide/Al0.64Sc0.36N/Pt) that is compatible with BEOL temperatures (≤ 350 ℃) grown on
top of a 4-inch silicon wafer. The device shows self-selective behavior as a diode with > 105
rectification ratio (for 5 V). It can suppress sneak currents without the need for additional
access transistors or selectors. … A summary of FE memristor characteristics from the
literature is presented in Table I, with a focus on the CMOS compatibility, On/Off ratio, and …
oxide/Al0.64Sc0.36N/Pt) that is compatible with BEOL temperatures (≤ 350 ℃) grown on
top of a 4-inch silicon wafer. The device shows self-selective behavior as a diode with > 105
rectification ratio (for 5 V). It can suppress sneak currents without the need for additional
access transistors or selectors. … A summary of FE memristor characteristics from the
literature is presented in Table I, with a focus on the CMOS compatibility, On/Off ratio, and …
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
arxiv.org
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