22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and
GSM receiver. The front-end has been fabricated in a 0.35-/spl mu/m BiCMOS process and,
in both modes, can use the same devices in the signal path except the LNA input transistors.
The front-end has a 27-dB gain control range, which is divided between the LNA and
quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 …