A high-efficiency solution-deposited thin-film photovoltaic device
Advanced Materials (Weinheim), 2008•osti.gov
High-quality Cu (In, Ga) Se {sub 2}(CIGS) films are deposited from hydrazine-based
solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS
films exhibit tunable stoichiometry and well-formed grain structure without requiring post-
deposition high-temperature selenium treatment. Devices based on these films offer power
conversion efficiencies of 10%(AM1. 5 illumination).(Abstract Copyright [2008], Wiley
Periodicals, Inc.)
solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS
films exhibit tunable stoichiometry and well-formed grain structure without requiring post-
deposition high-temperature selenium treatment. Devices based on these films offer power
conversion efficiencies of 10%(AM1. 5 illumination).(Abstract Copyright [2008], Wiley
Periodicals, Inc.)
High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)
osti.gov
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