A low-power scan driver circuit for oxide TFTs

JE Pi, MK Ryu, CS Hwang, SH Yang… - IEEE electron device …, 2012 - ieeexplore.ieee.org
JE Pi, MK Ryu, CS Hwang, SH Yang, SHK Park, SM Yoon, HK Leem, YK Kim, JD Kim
IEEE electron device letters, 2012ieeexplore.ieee.org
The scan driver composed of oxide thin-film transistors (TFTs) tends to exhibit anomalously
high power consumption because the oxide TFT often has negative threshold voltage. In
order to resolve this problem, we have invented a new scan driver circuit in which most TFTs
are turned off with negative V GS and no TFT with zero V GS is located between the high
and low supply voltages. As a result, we could maintain the power consumption within six
times of the normal value in spite of the negative threshold voltage of the oxide TFT.
The scan driver composed of oxide thin-film transistors (TFTs) tends to exhibit anomalously high power consumption because the oxide TFT often has negative threshold voltage. In order to resolve this problem, we have invented a new scan driver circuit in which most TFTs are turned off with negative V GS and no TFT with zero V GS is located between the high and low supply voltages. As a result, we could maintain the power consumption within six times of the normal value in spite of the negative threshold voltage of the oxide TFT.
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