backward transconductance amplifier (CBTA) at low-frequency is developed. The novelty of
the proposed macromodel is that real physical active device performance parameters
together with parasitic elements of the input–output terminals of the CBTA are taken into
account. In a first step, the CBTA is designed with±2.5 V by using standard CMOS
technology of 0.35 μ m AMS and the main performance parameters, such as: DC gain …