A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
T Miyamoto, K Takeuchi, F Koyama… - IEEE Photonics …, 1997 - ieeexplore.ieee.org
IEEE Photonics Technology Letters, 1997•ieeexplore.ieee.org
We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3
μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate
layers between well and barrier, which is effective for elongating the emission wavelength
and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the
proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional
rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs …
μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate
layers between well and barrier, which is effective for elongating the emission wavelength
and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the
proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional
rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs …
We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers.
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