A novel low power 8T-cell sub-threshold SRAM with improved read-SNM
S Hassanzadeh, M Zamani… - 2013 8th International …, 2013 - ieeexplore.ieee.org
The fast growth of battery-operated portable applications has compelled the static random
access memory (SRAM) designers to consider sub-threshold operation as a viable choice to
reduce the power consumption. To increase the hold, read and write static noise margin
(SNM) in the sub-threshold regime many structures has been proposed adding extra
transistors to the conventional 6T-cell. In this paper we propose a new 8T-cell SRAM that
shows 90% improvement in read SNM while write and hold SNM reduction can be ignored …
access memory (SRAM) designers to consider sub-threshold operation as a viable choice to
reduce the power consumption. To increase the hold, read and write static noise margin
(SNM) in the sub-threshold regime many structures has been proposed adding extra
transistors to the conventional 6T-cell. In this paper we propose a new 8T-cell SRAM that
shows 90% improvement in read SNM while write and hold SNM reduction can be ignored …
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