A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300° C
B Xia, JJ Ganem, E Briand, S Steydli… - Vacuum, 2023 - Elsevier
TiO 2 thin films prepared by atomic layer deposition (ALD) have attracted great attention due
to the widespread application of the oxide as a promising charge storage material for lithium
or proton batteries. In this work, we study TiO 2 film grown on Si substrates by atomic layer
deposition with tetrakis (dimethylamino) titanium as metal precursor (TDMAT) and water
vapour as an oxidant. The chemical composition and impurity content of the film as a
function of growth temperature is studied by Ion Beam Analysis (IBA). D 2 O (99.8%) was …
to the widespread application of the oxide as a promising charge storage material for lithium
or proton batteries. In this work, we study TiO 2 film grown on Si substrates by atomic layer
deposition with tetrakis (dimethylamino) titanium as metal precursor (TDMAT) and water
vapour as an oxidant. The chemical composition and impurity content of the film as a
function of growth temperature is studied by Ion Beam Analysis (IBA). D 2 O (99.8%) was …
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