A two-dimensional Fe-doped SnS2 magnetic semiconductor

B Li, T Xing, M Zhong, L Huang, N Lei, J Zhang… - Nature …, 2017 - nature.com
B Li, T Xing, M Zhong, L Huang, N Lei, J Zhang, J Li, Z Wei
Nature communications, 2017nature.com
Magnetic two-dimensional materials have attracted considerable attention for their
significant potential application in spintronics. In this study, we present a high-quality Fe-
doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms
were doped at the Sn atom sites, and the Fe contents are∼ 2.1%, 1.5%, and 1.1%. The field-
effect transistors based on the Fe0. 021Sn0. 979S2 monolayer show n-type behavior and
exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is …
Abstract
Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.
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