Atomic layer deposition (ALD) type processes for producing metal containing thin films
comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadi
enyl precursors as a metal source material. In preferred embodiments the metal containing
cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or
halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl
compound and separately bonded to at least one ligand via a nitrogenatom. In still other …

Atomic layer deposition (ALD) type processes for producing metal containing thin films
comprise feeding into a reaction space vapor phase pulses of metal containing
cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal
containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to
an oxygen or halide atom. In other embodiments the metal atom is bonded to a
cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen …