Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC
In this study, an ab initio molecular dynamics method is employed to investigate how the
existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It
reveals that the C and Si atoms around the SFs are generally more difficult to be displaced
than those in unfaulted SiC, and the corresponding threshold displacement energies for
them are generally larger, indicative of enhanced radiation tolerance caused by the
introduction of SFs, which agrees well with the recent experiment. As compared with the …
existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It
reveals that the C and Si atoms around the SFs are generally more difficult to be displaced
than those in unfaulted SiC, and the corresponding threshold displacement energies for
them are generally larger, indicative of enhanced radiation tolerance caused by the
introduction of SFs, which agrees well with the recent experiment. As compared with the …