About Kinks in AlGaAs lasers light-current characteristic
M Sanchez, JC Gonzalez, P Diaz… - … Physics Letters B, 2001 - World Scientific
M Sanchez, JC Gonzalez, P Diaz, R Pena-Sierra, A Escobosa
Modern Physics Letters B, 2001•World ScientificThe origin of the kinks in semiconductor lasers light-current characteristic (L (l)) is
theoretically alld experimentally analyzed. The devices are straight separate confinement
heterostructure lasers. We have developed a model to calculate L (l) which considers two
thermal loss mechanisms: the leakage current and Auger recombination. It is shown that the
kinks in the light-current characteristic appear at temperatures at which the considered
mechanisms crossover.
theoretically alld experimentally analyzed. The devices are straight separate confinement
heterostructure lasers. We have developed a model to calculate L (l) which considers two
thermal loss mechanisms: the leakage current and Auger recombination. It is shown that the
kinks in the light-current characteristic appear at temperatures at which the considered
mechanisms crossover.
The origin of the kinks in semiconductor lasers light-current characteristic (L(l)) is theoretically alld experimentally analyzed. The devices are straight separate confinement heterostructure lasers. We have developed a model to calculate L(l) which considers two thermal loss mechanisms: the leakage current and Auger recombination. It is shown that the kinks in the light-current characteristic appear at temperatures at which the considered mechanisms crossover.
World Scientific以上显示的是最相近的搜索结果。 查看全部搜索结果