… a novel AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-…
The AlGaN/GaN heterostructures were grown by metal organic chemical vapor deposition (…

… Al Ga N ∕ Ga N metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs)
have been currently intensively studied (see Refs. 1–5 and references therein). The …

… Abstract—We report on AlGaN/GaN metal oxide semicon- ductor heterostructure field effect
transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm. These multigate …

… We report on AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors
… MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high …

… AlGaN ∕ GaN MOSHFET with NiO insulating layer and present dc characteristics of the
devices. NiO was prepared by oxidation of Ni metal … oxide is comparable with other gate oxides. …

… 25 and 260 C were performed to analyze trapping effects in the Al 2 O 3 / AlGaN / GaN
metal-oxide-semiconductor heterostructure field-effect transistors. The trap states with a time …

… N ∕ Ga N metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), …
Unpassivated and Si O 2 -passivated heterostructure field-effect transistors (HFETs) were …

… years in developing AlGaN/GaN-based heterostructure field effect transistors (HFETs) [1–3]. …
SiO2/AlGaN/GaN metaloxide-semiconductor heterostructure field effect transistor (MOSHFET…

… (MISFETs) using i-GaN, i-AlGaN/GaN and Si3N4 as the gate insulator have been reported.…
applied to AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (…

… multigate AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor (…
Introduction: GaN based heterostructure field effect transistors (HFETs) have started to play …