An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction
A Jarndal, G Kompa - IEEE microwave and wireless …, 2006 - ieeexplore.ieee.org
A Jarndal, G Kompa
IEEE microwave and wireless components letters, 2006•ieeexplore.ieee.orgThe validity of the proposed small-signal model (SSM) and the developed extraction method
in for large GaN devices is investigated. Extraction of parasitic elements is performed for
different size devices to show the scaling of these elements with the gate width. The model
shows a very good result for describing the parasitic distributed effect, which is considerable
for large devices.
in for large GaN devices is investigated. Extraction of parasitic elements is performed for
different size devices to show the scaling of these elements with the gate width. The model
shows a very good result for describing the parasitic distributed effect, which is considerable
for large devices.
The validity of the proposed small-signal model (SSM) and the developed extraction method in for large GaN devices is investigated. Extraction of parasitic elements is performed for different size devices to show the scaling of these elements with the gate width. The model shows a very good result for describing the parasitic distributed effect, which is considerable for large devices.
ieeexplore.ieee.org
以上显示的是最相近的搜索结果。 查看全部搜索结果