An empirical large signal model for silicon carbide MESFETs
A Sayed, G Boeck - European Gallium Arsenide and Other …, 2005 - ieeexplore.ieee.org
In this paper, a large signal table-based model for SiC MESFET is presented. A packaged
commercially available high power MESFET device (CREE CRF24010) is adopted for the
model development. The extracted bias-dependent elements of the small signal model as
well as the measured DC data are mathematically described by small modification of
Angelov's formulation. Dispersion between DC and RF characteristics of the drain current is
also observed and interpreted. The new model is capable to predict small signal as well as …
commercially available high power MESFET device (CREE CRF24010) is adopted for the
model development. The extracted bias-dependent elements of the small signal model as
well as the measured DC data are mathematically described by small modification of
Angelov's formulation. Dispersion between DC and RF characteristics of the drain current is
also observed and interpreted. The new model is capable to predict small signal as well as …
[引用][C] An Empirical Large Signal Model for Silicon Carbide Mesfets
S Manohar - 2002 - tigerprints.clemson.edu
"An Empirical Large Signal Model for Silicon Carbide Mesfets" by Siddharth Manohar … An
Empirical Large Signal Model for Silicon Carbide Mesfets … Manohar, Siddharth, "An
Empirical Large Signal Model for Silicon Carbide Mesfets" (2002). Archived Theses. 5697. …
Empirical Large Signal Model for Silicon Carbide Mesfets … Manohar, Siddharth, "An
Empirical Large Signal Model for Silicon Carbide Mesfets" (2002). Archived Theses. 5697. …
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