enhancement technique, has been proposed and simulated using a standard 0.18 μm
CMOS process in this paper. By utilizing such a technique, proposed LDO is able to achieve
a fast transient response. Simulation results verify that the recovery time is as short as 7 μs
and the maximum undershoot and overshoot are as low as 55 mV and 30 mV, respectively.
In addition, the slew-rate enhancement circuit works in the subthreshold region at steady …