Analysis of GaAs photovoltaic device losses at high MOCVD growth rates
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015•ieeexplore.ieee.org
Gallium arsenide material has been deposited via metal organic chemical vapor deposition
(MOCVD) at growth rates varying between 14 μm/hr and 56 μm/hr. Photovoltaic device
results indicate a 6-7% relative decrease in efficiency between 14 and 56 μm/hr GaAs solar
cells, due to a reduction in short-circuit current and open-circuit voltage. By simulating the
experimental characterization data, it is established that performance losses are associated
with rear surface recombination velocity and Shockley-Read-Hall lifetime. The relative …
(MOCVD) at growth rates varying between 14 μm/hr and 56 μm/hr. Photovoltaic device
results indicate a 6-7% relative decrease in efficiency between 14 and 56 μm/hr GaAs solar
cells, due to a reduction in short-circuit current and open-circuit voltage. By simulating the
experimental characterization data, it is established that performance losses are associated
with rear surface recombination velocity and Shockley-Read-Hall lifetime. The relative …
Gallium arsenide material has been deposited via metal organic chemical vapor deposition (MOCVD) at growth rates varying between 14 μm/hr and 56 μm/hr. Photovoltaic device results indicate a 6-7% relative decrease in efficiency between 14 and 56 μm/hr GaAs solar cells, due to a reduction in short-circuit current and open-circuit voltage. By simulating the experimental characterization data, it is established that performance losses are associated with rear surface recombination velocity and Shockley-Read-Hall lifetime. The relative impact of these loss mechanisms will be quantified and conclude with discussions on their mitigation.
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