In the present society of nanotechnology era of low power, high speed devices in IoT,
robotics, artificial intelligence the most promising device is FinFET at technology node of
beyond 22nm as they provide better electrostatic control of the channel by gate, higher Ion
current, low Ioff current compared to MOSFETs. Further reduction of technology node of
channel requires different design architecture of device with different material to reduce
short channel effects. To reduce short channel effects future challenging device is gate all …