Analysis of phase distribution in phase-change nonvolatile memories
IEEE Electron Device Letters, 2004•ieeexplore.ieee.org
The phase transformation in chalcogenide-based nonvolatile memories is studied by cell
electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by
applying electrical pulses, then the cell resistance R and the current-voltage characteristics
are measured. From the analysis of the electrical parameters of the cell, we provide
evidence for a stacked-like phase distribution in the active layer. Results are discussed with
reference to the thermal profile during the program pulse in the chalcogenide layer.
electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by
applying electrical pulses, then the cell resistance R and the current-voltage characteristics
are measured. From the analysis of the electrical parameters of the cell, we provide
evidence for a stacked-like phase distribution in the active layer. Results are discussed with
reference to the thermal profile during the program pulse in the chalcogenide layer.
The phase transformation in chalcogenide-based nonvolatile memories is studied by cell electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by applying electrical pulses, then the cell resistance R and the current-voltage characteristics are measured. From the analysis of the electrical parameters of the cell, we provide evidence for a stacked-like phase distribution in the active layer. Results are discussed with reference to the thermal profile during the program pulse in the chalcogenide layer.
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