Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications
A fringing field‐effect‐dependent MOSFET equivalent‐circuit model for its microwave
frequency applications has been developed. The thermal noise performance of the device
has also been analyzed, including the distributed gate. The equivalent‐current noise source
takes into account the thermal noise generated by the resistive and inductive gate, and the
results so obtained are compared with experimental/simulated data, and are in close
agreement.© 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 97–105, 2001.
frequency applications has been developed. The thermal noise performance of the device
has also been analyzed, including the distributed gate. The equivalent‐current noise source
takes into account the thermal noise generated by the resistive and inductive gate, and the
results so obtained are compared with experimental/simulated data, and are in close
agreement.© 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 97–105, 2001.
Abstract
A fringing field‐effect‐dependent MOSFET equivalent‐circuit model for its microwave frequency applications has been developed. The thermal noise performance of the device has also been analyzed, including the distributed gate. The equivalent‐current noise source takes into account the thermal noise generated by the resistive and inductive gate, and the results so obtained are compared with experimental/simulated data, and are in close agreement. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 97–105, 2001.
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