An Activated Barrier Double Well Thermionic (ABDWT) model is used to calculat e hole trapping-detrapping (ΔV _HT ) kinetics, which, together with generation of interface (ΔV _IT ) and bulk (ΔV _OT ) traps, model the time kinetics of threshold voltage shift (ΔV _T ) during and after Negative Bias Temperature Instability (NBTI) stress over an extended temperature range (T: +165 to -40 °C). Transient Trap Occupancy Model (TTOM) enabled Reaction-Diffusion (RD) model is used for ΔV _IT and empirical stretched exponential equations are used for ΔV _OT . The overall BTI Analysis Tool (BAT) framework is used to model ultra-fast ΔV _T time kinetics from Gate First (GF) High-K Metal Gate (HKMG) Fully Depleted Silicon on Insulator (FDSOI) MOSFETs and Replacement Metal Gate (RMG) HKMG SOI FinFETs (SOIFF).