Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
We present a novel analytical modeling of a zigzag single-walled semiconducting carbon
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-
of-a-potential barrier approach. By implementing multimode carrier transport, we explore
and compare the performance of a low-(360cm2/Vs) and high-mobility (7200cm2/Vs)
CNFET model with experimental data from nanotube and 45nm MOSFET, respectively, as
well as existing compact models. Mobility and carrier concentration models are also …
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-
of-a-potential barrier approach. By implementing multimode carrier transport, we explore
and compare the performance of a low-(360cm2/Vs) and high-mobility (7200cm2/Vs)
CNFET model with experimental data from nanotube and 45nm MOSFET, respectively, as
well as existing compact models. Mobility and carrier concentration models are also …
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